MORESEMI MSN0360D
N-Channel MOSFET
GENERAL FEATURES
● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Lead Free Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0360D MSN0360D TO-252-2L Reel Size - Tape width - Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum