MORESEMI MSN05B2K
N-Channel MOSFET
GENERAL FEATURES
● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Lead Free Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN05B2K MSN05B2K TO-220-3L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Curre