MSN05B2K Overview
MSN05B2K 55V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN05B2K Key Features
- VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply