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MT3205A Datasheet Preview

MT3205A Datasheet

N-Channel Power MOSFET

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MOS-TECH Semiconductor Co.,LTD
MT3205A
N-Channel Power MOSFET
V, 10A, .mΩ
Features
• RDS(on) = 3.6mΩ ( Typ.)@ VGS = 10V, ID = 100A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant

Description
• This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
D
GDS
TO-220

G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
S
Ratings
60
±20
120
470
397
250
1.0
-55 to +175
Ratings
0.65
35
Units
V
V
A
A
mJ
W
W/oC
oC
Units
oC/W
©2011 MOS-TECH Semiconductor Corporation
MT3205A Rev. B
1
www.mtsemi.com




MOS-TECH

MT3205A Datasheet Preview

MT3205A Datasheet

N-Channel Power MOSFET

No Preview Available !

Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
MT3205A
Device
MT3205A
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min. Typ.
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25
VDS = 44V, VGS = 0V
VDS = 44V, TC = 150oC
VGS = ±20V, VDS = 0V
60 -
--
--
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 100A
VGS
TJ =
= 10V,
175oC
ID
=
56A
2
- 3.6
- 10
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(tot)
Qg(th)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VGS = 0V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDS = 44V
ID = 59A
Ig = 1mA
-
-
-
3
-
-
-
-
3520
550
340
4
121
35
45
18
39
Switching Characteristics
tON
td(on)
tr
td(off)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 28V, ID = 59A
VGS = 10V, RGEN = 2.5Ω
- 99
- 19
- 127
- 47
- 19
- 67
Drain-Source Diode Characteristics
VSD Drain to Source Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 59A
VGS = 0V, ISD = 59A
dIF/dt = 100A/μs
--
- 49
- 78
Notes:
1: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9.
2: L = 0.21mH, IAS = 59A, VDD = 50V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC
Max.
-
25
250
±100
4
4. 5
-
4360
760
470
5
145
46
-
-
-
137
38
251
73
49
89
1.2
-
-
Units
V
μA
nA
V
mΩ
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
ns
nC
MT3205A Rev. B
2 www.mtsemi.com


Part Number MT3205A
Description N-Channel Power MOSFET
Maker MOS-TECH
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MT3205A Datasheet PDF






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