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S60D45 - Schottky Barrier Rectifiers

Download the S60D45 datasheet PDF. This datasheet also covers the S60D30 variant, as both devices belong to the same schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laborato.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S60D30-MOSPEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S60D45
Manufacturer MOSPEC
File Size 191.60 KB
Description Schottky Barrier Rectifiers
Datasheet download datasheet S60D45 Datasheet

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Other Datasheets by MOSPEC

Part Number Description
S60D40 Schottky Barrier Rectifiers
S60D30 Schottky Barrier Rectifiers
S60D35 Schottky Barrier Rectifiers
S60D50 Schottky Barrier Rectifiers
S60D60 Schottky Barrier Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction.