MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
＊Flammability Classification 94V-O
＊Pb free
＊In compliance with EU RoHs directives
S60D30 Thru S60D60
SCHOTTKY BARRIER
RECTIFIERS
60 AMPERES
30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR),TC=100℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
VRRM
VRWM
VR
VR(RMS)
IF(AV)
IFM
S60D
30 35 40 45 50 60
30 35 40 45 50 60
21 25 28 32 35 42
30
60
60
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)
IFSM
400
Unit
V
V
A
A
A
Operating and Storage Junction Temperature
Range
TJ , TSTG
-65 to +150
℃
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Rθ j-c
2.0 ℃/w
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =30 Amp TC = 25℃)
( IF =30 Amp TC = 100℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 100℃)
RA-D-0882 Ver.A
Symbol
S60D
Unit
30 35 40 45 50 60
VF 0.65 0.75 V
0.58 0.72
IR 3.0 mA
80
DIM MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C 1.90 2.70
D 5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H 1.82 2.46
I 2.92 3.23
J 0.89 1.53
K 5.26 5.66
L 18.50 21.50
M 4.68 5.36
N 2.40 2.80
O 3.25 3.65
P 0.55 0.70
