MOSPEC
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as
free wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
＊ESD: 8KV(Min.) Human-Body Model
＊Flammability Classification 94V-O
＊Pb free
＊In compliance with EU RoHs directives
＊“G” Green product
SRF1060C
Schottky Barrier
RECTIFIERS
10 AMPERES
60 VOLTS
ITO-220AB
MAXIMUM RATINGS
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( per doode )
Total Device (Rated VR), TC=125℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)
VRRM
VRWM
VR
VR(RMS)
IF(AV)
IFM
IFSM
Junction Temperature
TJ
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =5 Amp TC = 25℃)
( IF =5 Amp TC = 100℃)
Typical Thermal Resistance junction to case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
Symbol
VF
Rθ j-c
IR
RA-D-0892 Ver.A
SRF1060C
60
42
5.0
10
10
125
125
-65 to +150
SRF1060C
0.70
0.60
4.2
0.5
20
Unit
V
V
A
A
A
℃
℃
Unit
V
℃/w
mA
DIM
MILLIMETERS
MIN MAX
A 14.80 16.10
B 12.65 13.80
C 9.85 10.36
D 4.60 6.80
E 2.50 3.50
F 1.00 1.45
G 1.00 1.45
H 0.30 0.90
I 2.40 2.70
J 2.34 3.30
K 0.55 1.30
L 0.36 0.80
M 4.20 4.90
N 1.10 1.80
O 2.90 3.50
P 2.50 3.15
Q 2.90 3.50
R 3.10 4.85
