MPQ1918 - Half-Bridge GaN/MOSFET Driver

Product Overview

MPS

MPQ1918 Half-Bridge GaN/MOSFET Driver by MPS - Datasheet Preview — Datasheet preview – MPQ1918

Datasheet Details

Part number	MPQ1918
Manufacturer	MPS
File Size	630.07 KB
Description	Half-Bridge GaN/MOSFET Driver
Datasheet	MPQ1918 Datasheet
Additional preview pages of the MPQ1918 datasheet.

Product details

Description

The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application.

Features

independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage (VCC), which prevents the gate voltage from exceeding the GaN FET’s maximum gate-to-source voltage rating. The MPQ1918 has two separate gate outputs, allowing the turn-on and turn-off capabilities to be independently adjusted by addin.

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Published: Jan 9, 2024 |