MOS-TECH Semiconductor Co.,LTD
N
MT3203
N-Channel Low Qg® MOSFET
30V, 100A, 3.3mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall ef ficiency of DC/ DC converters using
either synchronous or conven tional swit ching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 3.3mΩ, VGS = 10V, ID = 40A
• rDS(ON) = 4.5mΩ, VGS = 4.5V, ID = 40A
• High performance t rench t echnology for ext remely low
rDS(ON)
• Low gate charge
• High power and current handling capability
(FLANGE)
DRAIN
SOURCE
DRAIN
GATE
G
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
MT3203
Device
MT3203
Package
TO-220AB
Reel Size
Tube
D
S
Ratings
30
±20
100
90
16
Figure 4
115
110
0.73
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
1.36
62
oC/W
oC/W
Tape Width
N/A
Quantity
50 units
©2010 MOS-TECH Semiconductor Corporation
MT3203 Rev. A
