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MM10G3T120B - IGBT

Key Features

  • IGBT chip in trench FS-technology.
  • Low switching losses.
  • VCE(sat) with positive temperature coefficient.
  • Fast switching and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.

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Datasheet Details

Part number MM10G3T120B
Manufacturer MacMic
File Size 381.96 KB
Description IGBT
Datasheet download datasheet MM10G3T120B Datasheet

Full PDF Text Transcription for MM10G3T120B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MM10G3T120B. For precise diagrams, and layout, please refer to the original PDF.

March 2020 Version 01 MM10G3T120B 1200V 10A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive tempe...

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ch FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems 1 2 3 1.Gate 2.Collector 3.Emitter Type VCES IC MM10G3T120B 1200V 10A VCE(sat) TJ=25°C 1.