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MM20G3R135B Datasheet Preview

MM20G3R135B Datasheet

IGBT

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March 2018
Preliminary
MM20G3R135B
1350V 20A RC- IGBT
RoHS Compliant
PRODUCT FEATURES
1350V Reverse conducting IGBT with monolithic body diode
VCE(sat) with positive temperature coefficient
Low switching losses
Low EMI
APPLICATIONS
HInductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM20G3R135B 1350V 20A
VCE(sat) TJ=25°C
1.6V
TJmax
175°C
Marking
MM20G3R135B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=100
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
1350
V
±20
40
20
A
60
333
W
1350
V
20
A
60
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MM20G3R135B Datasheet Preview

MM20G3R135B Datasheet

IGBT

No Preview Available !

MM20G3R135B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.5mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=20A, VGE=15V, TJ=25
IC=20A, VGE=15V, TJ=125
IC=20A, VGE=15V, TJ=175
ICES
Collector Leakage Current
VCE=1350V, VGE=0V, TJ=25
VCE=1350V, VGE=0V, TJ=175
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=20A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=20A
RG =20,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=20A
RG =20,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=20A
RG =20,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.1
-100
Typ.
5.8
1.6
1.8
1.9
none
0.195
1.65
50
70
110
50
60
250
350
80
100
2
2.4
1.1
1.4
Max. Unit
6.4
1.8
V
100 µA
2.5 mA
100 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
0.45 K /W
Body Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=20A , VGE=0V, TJ =25
VF
Forward Voltage
IF=20A , VGE=0V, TJ =125
IF=20A , VGE=0V, TJ =175
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.6
1.8
1.73
V
1.8
0.45 K /W
2


Part Number MM20G3R135B
Description IGBT
Maker MacMic
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