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MM40G3U65BN - IGBT

Key Features

  • 650V IGBT chip in trench FS-technology.
  • Low switching losses.
  • VCE(sat) with positive temperature coefficient.
  • Fast switching and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.

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Datasheet Details

Part number MM40G3U65BN
Manufacturer MacMic
File Size 256.14 KB
Description IGBT
Datasheet download datasheet MM40G3U65BN Datasheet

Full PDF Text Transcription for MM40G3U65BN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MM40G3U65BN. For precise diagrams, and layout, please refer to the original PDF.

January 2021 Version 01 MM40G3U65BN 650V 40A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive...

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n trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems 1 2 3 1.Gate 2.Collector 3.Emitter Type VCES IC MM40G3U65BN 650V 40A VCE(sat) TJ=25°C 1.