MM40G3U65BN
FEATURES
- 650V IGBT chip in trench FS-technology
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Fast switching and short tail current
- Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
- High frequency switching application
- Medical applications
- Motion/servo control
- UPS systems
1 2 3
1.Gate 2.Collector 3.Emitter
Type
VCES
MM40G3U65BN 650V 40A
VCE(sat) TJ=25°C 1.75V
TJmax 175°C
Marking MM40G3U65BN
Package TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
ICpuls Ptot VRRM IF(AV) IFpuls TJmax TJop Tstg
DC Collector Current
Pulsed collector current,tp limited by TJmax Power Dissipation Per IGBT
TC=25℃ TC=100℃
Repetitive Reverse Voltage Average Forward Current Diode pulsed current,tp limited by TJmax Max. Junction Temperature
TJ=25℃ TC=25℃
Operating Temperature
Storage Temperature
Torque to...
