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MM40G3U65BN Datasheet Preview

MM40G3U65BN Datasheet

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January 2021
Version 01
MM40G3U65BN
650V 40A IGBT
RoHS Compliant
PRODUCT FEATURES
650V IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM40G3U65BN 650V 40A
VCE(sat) TJ=25°C
1.75V
TJmax
175°C
Marking
MM40G3U65BN
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
ICpuls
Ptot
VRRM
IF(AV)
IFpuls
TJmax
TJop
Tstg
DC Collector Current
Pulsed collector current,tp limited by TJmax
Power Dissipation Per IGBT
TC=25
TC=100
Repetitive Reverse Voltage
Average Forward Current
Diode pulsed current,tp limited by TJmax
Max. Junction Temperature
TJ=25
TC=25
Operating Temperature
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
650
V
±20
61
40
A
120
230
W
650
V
8
A
16
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MM40G3U65BN Datasheet Preview

MM40G3U65BN Datasheet

IGBT

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MM40G3U65BN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=40A, VGE=15V, TJ=25
IC=40A, VGE=15V, TJ=125
IC=40A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
RGint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=40A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=40A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=40A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µs , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=8A , VGE=0V, TJ =25
IF=8A , VGE=0V, TJ =125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=8A , VGE=0V, TJ =150
IF=8A , VR=400V
dIF/dt=-400A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
4.5
5.2
6.0
1.75 2.15
V
2.1
2.15
100 µA
10 mA
-200
200 nA
2
180
nC
1.8
nF
95
pF
20
ns
25
ns
25
ns
35
ns
40
ns
40
ns
200
ns
230
ns
240
ns
30
ns
35
ns
35
ns
1.75
mJ
1.87
mJ
0.85
mJ
0.9
mJ
230
A
0.65 K /W
Min. Typ. Max. Unit
1.75 2.05
1.4
V
1.35
140
ns
9
A
0.53
µC
0.24
mJ
3 K /W


Part Number MM40G3U65BN
Description IGBT
Maker MacMic
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