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MMG100HB120H6HN Datasheet Preview

MMG100HB120H6HN Datasheet

IGBT

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May 2015
MMG100HB120H6HN
Version 01
1200V 100A Four-Pack Module
RoHS Compliant
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(T4 Fast Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
TJmax =175°C
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
±20
150
100
200
550
Unit
V
A
W
Values
1200
100
200
1850
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




MacMic

MMG100HB120H6HN Datasheet Preview

MMG100HB120H6HN Datasheet

IGBT

No Preview Available !

MMG100HB120H6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Qg
Cies
Cres
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=4mA
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=100A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-400
Typ.
6.0
2.1
2.5
7.5
0.47
6.2
350
150
160
170
65
70
75
400
450
480
40
60
70
11.5
12.5
5.5
6.0
Max. Unit
6.5
2.5 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
400
A
0.27 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=100A , VGE=0V, TJ=25
IF=100A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=100A , VR=600V
dIF/dt=-1500A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.65
1.65
480
85
19.4
7.6
Max. Unit
2.15
V
ns
A
µC
mJ
0.5 K /W
2


Part Number MMG100HB120H6HN
Description IGBT
Maker MacMic
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MMG100HB120H6HN Datasheet PDF






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