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MacMic

MMG100J120U6HN Datasheet Preview

MMG100J120U6HN Datasheet

IGBT

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February 2017
PRODUCT FEATURES
IGBT CHIP(T4 Fast Trench+Field Stop technology)
Low switching losses
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Popular SOT-227 Package
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG100J120U6HN
Version 1
1200V 100A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=175
TC=95,TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1200
V
±20
150
100
A
200
550
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
IF(AV)
Repetitive Reverse Voltage
Average Forward Current
TJ=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
100
A
200
1850
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3




MacMic

MMG100J120U6HN Datasheet Preview

MMG100J120U6HN Datasheet

IGBT

No Preview Available !

MMG100J120U6HN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=4.0mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125°C,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-400
Typ.
6.0
2.1
2.5
7.5
0.47
6.2
0.35
150
160
170
65
70
75
400
450
480
40
60
70
11.5
12.5
5.5
6.0
400
Max. Unit
6.5
2.5
V
1
mA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.27 K /W
Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=100A , VGE=0V, TJ=25
IF=100A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=100A , VR=600V
dIF/dt=-1500A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.65 2.15
V
1.65
480
ns
85
A
19.4
µC
7.6
mJ
0.5 K /W
4


Part Number MMG100J120U6HN
Description IGBT
Maker MacMic
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MMG100J120U6HN Datasheet PDF






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