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MacMic

MMG100J120U6TC Datasheet Preview

MMG100J120U6TC Datasheet

IGBT

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July 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Low switching losses
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG100J120U6TC
Version 01
1200V 100A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=95,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1200
V
±20
147
100
A
200
515
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
100
A
200
2450
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG100J120U6TC




MacMic

MMG100J120U6TC Datasheet Preview

MMG100J120U6TC Datasheet

IGBT

No Preview Available !

MMG100J120U6TC
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=4mA
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
IC=100A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=100A
RG =5.1Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=100A
RG =5.1Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=100A
RG =5.1Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125°C,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
6.0
1.85
2.10
2.15
7
0.53
7.1
300
170
190
46
50
350
410
100
200
12
17.2
4.6
8.8
420
Max. Unit
6.5
2.25
V
1
mA
10 mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.29 K /W
Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
VF
Forward Voltage
Parameter/Test Conditions
IF=100A , VGE=0V, TJ =25
IF=100A , VGE=0V, TJ =125
IF=100A , VGE=0V, TJ =150
trr
IRRM
QRR
Erec
RthJCD
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=100A , VR=600V
dIF/dt=-1700A/μs
TJ =150
Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.75
2.3
1.5
V
1.45
580
ns
99
A
24
µC
7.1
mJ
0.5 K /W
2


Part Number MMG100J120U6TC
Description IGBT
Maker MacMic
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MMG100J120U6TC Datasheet PDF






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