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MacMic

MMG100J120UZ Datasheet Preview

MMG100J120UZ Datasheet

IGBT

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April 2015
PRODUCT FEATURES
High Short Circuit Capability
Free wheeling diodes with fast and soft reverse recovery
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Popular SOT-227 Package
MMG100J120UZ
Version 01
1200V 100A IGBT Module
RoHS Compliant
APPLICATIONS
Invertor Convertor
Welder SMPS and UPS
Induction Heating
IGBT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
V
±20
150
100
A
200
690
W
MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
TJmax
Max. Junction Temperature
150
TJop
Operating Temperature
-40~125
°C
Tstg
Visol
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
-40~125
3000
V
Torque
to heatsink
to terminal
RecommendedM4
RecommendedM4
0.7~1.1
Nm
0.7~1.1
Nm
Weight
26.5
g
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG100J120UZ Datasheet Preview

MMG100J120UZ Datasheet

IGBT

No Preview Available !

MMG100J120UZ
IGBT
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=4mA
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=100A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0 6.2
1.8
2.0
-400
2
1.05
7.43
340
100
110
60
60
420
490
60
75
6
7.5
7
10
470
7.0
2.4 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.18 K /W
200
25°C
150
125°C
100
50
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics
IGBT
200
150
100
50
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125°C
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT
2


Part Number MMG100J120UZ
Description IGBT
Maker MacMic
PDF Download

MMG100J120UZ Datasheet PDF






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