900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMG100J120UZ6TN Datasheet Preview

MMG100J120UZ6TN Datasheet

IGBT

No Preview Available !

November 2018
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG100J120UZ6TN
Version 01
1200V 100A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=150
TC=80,TJmax=150
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=150
Values
Unit
1200
V
±20
140
100
A
200
450
W
MODULE CHARACTERISTICS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink
Torque
to terminal
RecommendedM4
RecommendedM4
Weight
Values
Unit
150
-40~125
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG100J120UZ6TN Datasheet Preview

MMG100J120UZ6TN Datasheet

IGBT

No Preview Available !

MMG100J120UZ6TN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=4mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25°C
IC=100A, VGE=15V, TJ=125°C
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25°C
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=100A
RG =3.9,
VGE=±15V,
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=100A
RG =3.9,
VGE=±15V,
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=100A
RG =3.9,
VGE=±15V,
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
ISC
RthJC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125°C,VCC=900V
Junction to Case Thermal Resistance Per IGBT
Min.
5
-400
Typ.
5.8
1.7
1.9
7.5
0.9
7.1
0.3
260
290
30
50
420
520
70
90
7.8
10
8
10
400
Max. Unit
6.5
2.15 V
100 µA
1
mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.28 K /W
2


Part Number MMG100J120UZ6TN
Description IGBT
Maker MacMic
PDF Download

MMG100J120UZ6TN Datasheet PDF






Similar Datasheet

1 MMG100J120UZ6T4N IGBT
MacMic
2 MMG100J120UZ6TC IGBT
MacMic
3 MMG100J120UZ6TN IGBT
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy