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MacMic

MMG150D170B6EN Datasheet Preview

MMG150D170B6EN Datasheet

IGBT

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April 2015
PRODUCT FEATURES
IGBT3 CHIP(1700V Trench+Field Stop technology)
Low turn-off losses, short tail current
VCE(sat) with positive temperature coefficient
DIODE CHIP(1700V EMCON 3 technology)
Free wheeling diodes with fast and soft reverse recovery
MMG150D170B6EN
1700V 150A IGBT Module
Version 01
RoHS Compliant
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1700
V
±20
210
150
A
300
1070
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1700
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
150
A
300
I2t
TJ =125, t=10ms, VR=0V
4200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG150D170B6EN Datasheet Preview

MMG150D170B6EN Datasheet

IGBT

No Preview Available !

MMG150D170B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
5.2 5.8 6.4
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=150A, VGE=15V, TJ=25
2 2.45 V
IC=150A, VGE=15V, TJ=125
2.4
VCE=1700V, VGE=0V, TJ=25
3 mA
VCE=1700V, VGE=0V, TJ=125
20 mA
VCE=0V,VGE=±15V, TJ=25
-400
400 nA
Rgint
Integrated Gate Resistor
4.3
Qg
Gate Charge
VCE=900V, IC=150A , VGE=±15V
1.8
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=900V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
13.6
nF
450
pF
370
ns
400
ns
40
ns
50
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=900V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=900V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=1000V
650
ns
800
ns
180
ns
300
ns
33
mJ
48
mJ
32
mJ
47
mJ
600
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.14 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=125
1.8 2.2
V
1.9
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=150A , VR=900V
dIF/dt=-3600A/μs
TJ =125
500
ns
240
A
72
µC
Erec
Reverse Recovery Energy
41
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.24 K /W
2


Part Number MMG150D170B6EN
Description IGBT
Maker MacMic
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MMG150D170B6EN Datasheet PDF






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