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MacMic

MMG150J120UZ6TN Datasheet Preview

MMG150J120UZ6TN Datasheet

IGBT

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February 2017
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG150J120UZ6TN
Version 1
1200V 150A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=150
TC=80,TJmax=150
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=150
Values
Unit
1200
V
±20
200
150
A
300
690
W
MODULE CHARACTERISTICS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink
Torque
to terminal
RecommendedM4
RecommendedM4
Weight
Values
Unit
150
-40~125
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3




MacMic

MMG150J120UZ6TN Datasheet Preview

MMG150J120UZ6TN Datasheet

IGBT

No Preview Available !

MMG150J120UZ6TN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25°C
IC=150A, VGE=15V, TJ=125°C
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25°C
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=150A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=150A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=150A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=150A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
ISC
RthJC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125°C,VCC=600V
Junction to Case Thermal Resistance Per IGBT
Min.
5
-400
Typ.
5.8
1.7
1.9
5
1.4
10.5
0.4
260
290
30
50
420
520
70
90
12
16
11
14.5
600
Max. Unit
6.5
2.15 V
100 µA
1
mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.18 K /W
4


Part Number MMG150J120UZ6TN
Description IGBT
Maker MacMic
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MMG150J120UZ6TN Datasheet PDF






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