Datasheet4U Logo Datasheet4U.com

MMG150Q120B6HN - IGBT

Key Features

  • High short circuit capability,self limiting short circuit current.
  • IGBT CHIP(T4 Fast Trench+Field Stop technology).
  • VCE(sat) with positive temperature coefficient.
  • Fast switching and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.
  • Low switching losses.
  • TJmax =175°C.

📥 Download Datasheet

Datasheet Details

Part number MMG150Q120B6HN
Manufacturer MacMic
File Size 406.11 KB
Description IGBT
Datasheet download datasheet MMG150Q120B6HN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
April 2015 MMG150Q120B6HN Version 01 1200V 150A IGBT Module RoHS Compliant PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses □ TJmax =175°C APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless o