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MMG150S060B6EN Datasheet Preview

MMG150S060B6EN Datasheet

IGBT

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March 2011
MMG150S060B6EN
600V 150A IGBT Module
PRELIMINARY
RoHS Compliant
FEATURES
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
GS Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Ptot
Diode
VRRM
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
TVj=25°C
TC=25°C
TC=60°C
tp=1ms
600
V
±20
V
225
A
150
A
300
A
500
W
TVj=25°C
600
V
TC=25°C
225
A
TC=60°C
150
A
tp=1ms
300
A
TVj =125°C, t=10ms, VR=0V
2000
A2s
MacMic Science & Technology Co., Ltd.
Version: 1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG150S060B6EN Datasheet Preview

MMG150S060B6EN Datasheet

IGBT

No Preview Available !

MMG150S060B6EN
ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=2.4mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=150A, VGE=15V, TVj=25°C
IC=150A, VGE=15V, TVj=125°C
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=600V, VGE=0V, TVj=25°C
VCE=600V, VGE=0V, TVj=125°C
VCE=0V,VGE±15V, TVj=125°C
RGint
Qge
Integrated Gate Resistor
Gate Charge
VCE=300V, IC=150A , VGE=±15V
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
VCC=300V,IC=150A,
RG =3.3Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
td(off)
Turn - off Delay Time
tf
Fall Time
VCC=300V,IC=150A,
RG =3.3Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
Eon
Turn - on Energy
Eoff
Turn - off Energy
VCC=300V,IC=150A,
RG =3.3Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
ISC
RthJC
Short Circuit Current
tpsc6µS , VGE=15V
TVj=125°C,VCC=360V
Junction-to-Case Thermal Resistance Per IGBT
Diode
VF
Forward Voltage
IF=150A , VGE=0V, TVj =25°C
IF=150A , VGE=0V, TVj =125°C
IRRM
Qrr
Erec
RthJCD
Max. Reverse Recovery Current IF=150A , VR=300V
Reverse Recovery Charge
diF/dt=-5400A/μs
Reverse Recovery Energy
TVj=125°C
Junction-to-Case Thermal Resistance Per Diode
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
1.6
9.3
0.29
150
160
30
40
340
370
60
70
0.85
1.35
4.1
5.3
750
1.55
1.50
180
13.0
3.5
Max.
6.5
1
5
400
0.3
0.5
Unit
V
V
V
mA
mA
nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
V
V
A
µC
mJ
K /W
-2-


Part Number MMG150S060B6EN
Description IGBT
Maker MacMic
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MMG150S060B6EN Datasheet PDF






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