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MacMic

MMG150W060X6EN Datasheet Preview

MMG150W060X6EN Datasheet

IGBT

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February 2017
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
MMG150W060X6EN
Version 1
600V 150A Six-Pack Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=60, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
180
150
A
300
428
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
600
V
150
A
300
2000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3




MacMic

MMG150W060X6EN Datasheet Preview

MMG150W060X6EN Datasheet

IGBT

No Preview Available !

MMG150W060X6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=150A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
1.6
9.3
0.29
150
160
30
40
340
370
60
70
0.85
1.35
4.1
5.3
750
Max. Unit
6.5
1.9
V
1
mA
5
mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.35 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=300V
dIF/dt=-5400A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
V
1.50
160
ns
180
A
13
µC
3.5
mJ
0.6 K /W
4


Part Number MMG150W060X6EN
Description IGBT
Maker MacMic
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MMG150W060X6EN Datasheet PDF






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