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MacMic

MMG150WB170H6EN Datasheet Preview

MMG150WB170H6EN Datasheet

IGBT

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February 2016
PRODUCT FEATURES
IGBT3 CHIP(1700V Trench+Field Stop technology)
Low turn-off losses, short tail current
VCE(sat) with positive temperature coefficient
DIODE CHIP(1700V EMCON 3 technology)
Free wheeling diodes with fast and soft reverse recovery
MMG150WB170H6EN
Version 01
1700V 150A Four-Pack Module
RoHS Compliant
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=95, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1700
V
±20
230
150
A
300
1250
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1700
V
150
A
300
3800
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG150WB170H6EN Datasheet Preview

MMG150WB170H6EN Datasheet

IGBT

No Preview Available !

MMG150WB170H6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=900V, IC=150A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=150A
RG =9.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=150A
RG =9.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=150A
RG =9.1,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
5.8
2
2.4
5
1.7
13.5
450
280
300
50
66
810
1000
180
300
33
48
32
47
600
Max. Unit
6.4
2.45 V
3
mA
20 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.12 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=900V
dIF/dt=-2150A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.2
V
1.9
550
ns
190
A
65.5
µC
36
mJ
0.21 K /W
2


Part Number MMG150WB170H6EN
Description IGBT
Maker MacMic
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MMG150WB170H6EN Datasheet PDF






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