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MMG150WB170H6EN - IGBT

Key Features

  • IGBT3 CHIP(1700V Trench+Field Stop technology).
  • Low turn-off losses, short tail current.
  • VCE(sat) with positive temperature coefficient.
  • DIODE CHIP(1700V EMCON 3 technology).
  • Free wheeling diodes with fast and soft reverse recovery MMG150WB170H6EN Version 01 1700V 150A Four-Pack Module RoHS Compliant.

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Datasheet Details

Part number MMG150WB170H6EN
Manufacturer MacMic
File Size 954.54 KB
Description IGBT
Datasheet download datasheet MMG150WB170H6EN Datasheet

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February 2016 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery MMG150WB170H6EN Version 01 1700V 150A Four-Pack Module RoHS Compliant APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175