900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMG200D170B Datasheet Preview

MMG200D170B Datasheet

IGBT

No Preview Available !

March 2016
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(Highly rugged SPT+ design)
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
Preliminary
MMG200D170B
1700V 200A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TJmax=175
Values
Unit
1700
V
±20
300
200
A
400
1360
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1700
V
200
A
400
TBD
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG200D170B Datasheet Preview

MMG200D170B Datasheet

IGBT

No Preview Available !

MMG200D170B
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=900V, IC=200A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=200A
RG =6,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=200A
RG =6,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=200A
RG =6,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
ISC
Short Circuit Current
TJ=150
tpsc10µS , VGE=15V
TJ=150,VCC=1300V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-500
Typ.
6.2
2.5
3.1
1.54
13.5
0.46
240
260
120
130
450
550
160
180
48
63
70
38
58
64
620
Max. Unit
7.4
2.75 V
1
mA
10 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.11 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
IF=200A , VGE=0V, TJ=25
IF=200A , VGE=0V, TJ=150
IF=200A , VR=900V
dIF/dt=-2100A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.25
V
1.9
880
ns
220
A
106
µC
65
mJ
0.2 K /W
2


Part Number MMG200D170B
Description IGBT
Maker MacMic
PDF Download

MMG200D170B Datasheet PDF






Similar Datasheet

1 MMG200D170B IGBT
MacMic
2 MMG200D170B6EN IGBT
MacMic
3 MMG200D170B6TC IGBT
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy