900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMG25CE120XB6TC Datasheet Preview

MMG25CE120XB6TC Datasheet

PIM

No Preview Available !

November 2019
MMG25CE120XB6TC
Version 01
1200V 25A PIM Module
RoHS Compliant
PRODUCT FEATURES
Substrate for Low Thermal Resistance
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Solder Contact Technology, Rugged mounting due to integrated
Mounting clamps
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
39
25
A
50
176
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
25
A
50
110
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG25CE120XB6TC Datasheet Preview

MMG25CE120XB6TC Datasheet

PIM

No Preview Available !

MMG25CE120XB6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=0.8mA
IC=25A, VGE=15V, TJ=25
IC=25A, VGE=15V, TJ=125
IC=25A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=25A,
RG =20Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=25A,
RG =20Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=25A,
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
0
0.166
2
90
20
25
24
26
210
270
190
230
1.85
2.6
3
1.41
2.1
2.3
100
0.75
Max. Unit
6.5
2.25
V
1
mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.85 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
VF
Forward Voltage
Parameter/Test Conditions
IF=25A , VGE=0V, TJ =25
IF=25A , VGE=0V, TJ =125
IF=25A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=25A , VR=600V
dIF/dt=-1100A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance (Per Diode)
Min. Typ. Max. Unit
1.95 2.45
1.55
V
1.5
264
ns
37
A
4.4
µC
1.35
mJ
1.1
1.2 K /W
2


Part Number MMG25CE120XB6TC
Description PIM
Maker MacMic
PDF Download

MMG25CE120XB6TC Datasheet PDF






Similar Datasheet

1 MMG25CE120XB6TC PIM
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy