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MacMic

MMG400D120B6TC Datasheet Preview

MMG400D120B6TC Datasheet

IGBT

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August 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
High short circuit capability
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG400D120B6TC
Version 01
1200V 400A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=92, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
568
400
A
800
1973
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
400
800
39.2
Unit
V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG400D120B6TC




MacMic

MMG400D120B6TC Datasheet Preview

MMG400D120B6TC Datasheet

IGBT

No Preview Available !

MMG400D120B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=16mA
IC=400A, VGE=15V, TJ=25
IC=400A, VGE=15V, TJ=125
IC=400A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=400A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=400A
RG =2.0Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=400A
RG =2.0Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=400A
RG =2.0Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.2
1.1
2.15
30.5
1.35
90
108
114
68
74
76
510
550
560
120
200
220
34.5
38
42.4
45
1500
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.076 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=400A , VGE=0V, TJ =25
VF
Forward Voltage
IF=400A , VGE=0V, TJ =125
IF=400A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=400A , VR=600V
dIF/dt=-5600A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
MMG400D120B6TC
Min. Typ. Max. Unit
1.75
2.3
1.5
V
1.45
460
ns
626
A
160
µC
72.5
mJ
0.12 K /W


Part Number MMG400D120B6TC
Description IGBT
Maker MacMic
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MMG400D120B6TC Datasheet PDF






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