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MMG400VB065X6TC Datasheet Preview

MMG400VB065X6TC Datasheet

IGBT

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January 2019
PRODUCT FEATURES
650V IGBT CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
MMG400VB065X6TC
Preliminary
650V 400A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=62, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
650
V
±20
480
400
A
800
1200
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
650
400
800
12.8
Unit
V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG400VB065X6TC Datasheet Preview

MMG400VB065X6TC Datasheet

IGBT

No Preview Available !

MMG400VB065X6TC
IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=6.4mA
4.9
VCE(sat)
Collector Emitter
Saturation Voltage
IC=400A, VGE=15V, TJ=25
IC=400A, VGE=15V, TJ=125
IC=400A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
-400
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=400A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=400A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=400A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=400A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=150,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
RthCH Case to Heatsink Thermal Resistance λgrease = 1 W/(m·K) Per IGBT
Typ.
5.8
1.55
1.70
1.75
1
2.1
26.6
1.0
90
100
70
75
350
390
60
70
75
6.2
7.2
7.6
12.5
14.6
15.5
1900
0.08
Max. Unit
6.5
2.0
V
1
mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.125 K /W
K /W
Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min. Typ.
IF=400A , VGE=0V, TJ=25
1.65
VF
Forward Voltage
IF=400A , VGE=0V, TJ=125
1.55
IF=400A , VGE=0V, TJ=150
1.50
trr
Reverse Recovery Time
160
IRRM
Max. Reverse Recovery Current
IF=400A ,
TJ =150
340
QRR
Reverse Recovery Charge
VR=300V
29
dIF/dt=-5600A/μs TJ=25
3.6
Erec
Reverse Recovery Energy
TJ=125
7.0
TJ=150
7.6
RthJCD Junction to Case Thermal Resistance Per Diode
RthCHD Case to Heatsink Thermal Resistance λgrease = 1 W/(m·K) Per Diode
0.085
2
Max. Unit
2.1
V
ns
A
µC
mJ
mJ
mJ
0.2 K /W
K /W


Part Number MMG400VB065X6TC
Description IGBT
Maker MacMic
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MMG400VB065X6TC Datasheet PDF






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