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MMG450WB120B6E4N Datasheet Preview

MMG450WB120B6E4N Datasheet

IGBT

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May 2016
PRODUCT FEATURES
IGBT4 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
MMG450WB120B6E4N
Preliminary
1200V 450A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
675
450
A
900
2305
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1200
V
450
A
900
28500
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG450WB120B6E4N Datasheet Preview

MMG450WB120B6E4N Datasheet

IGBT

No Preview Available !

MMG450WB120B6E4N
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=17mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=450A, VGE=15V, TJ=25
IC=450A, VGE=15V, TJ=125
IC=450A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=450A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=450A
RG =1.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=450A
RG =1.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=450A
RG =1.3,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
ISC
Short Circuit Current
TJ=150
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
5.8
1.75
2.00
2.05
1.7
3.3
28
1.55
190
220
60
70
490
620
80
120
15
26
28.5
38
55.5
61.5
1800
Max. Unit
6.4
2.1
V
3
mA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.065 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=450A , VGE=0V, TJ=25
IF=450A , VGE=0V, TJ=125
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=450A , VGE=0V, TJ=150
IF=450A , VR=600V
dIF/dt=-7000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.65
2.1
1.65
V
1.65
575
A
105
µC
55
mJ
0.1 K /W
2


Part Number MMG450WB120B6E4N
Description IGBT
Maker MacMic
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MMG450WB120B6E4N Datasheet PDF






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