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MMG450WB120B6TN Datasheet Preview

MMG450WB120B6TN Datasheet

IGBT

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May 2015
MMG450WB120B6TN
1200V 450A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
V
±20
600
450
A
900
1950
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
450
A
900
I2t
TJ =125, t=10ms, VR=0V
34
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG450WB120B6TN Datasheet Preview

MMG450WB120B6TN Datasheet

IGBT

No Preview Available !

MMG450WB120B6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
chip
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=18mA
IC=450A, VGE=15V, TJ=25
IC=450A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=450A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=450A
RG =1.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=450A
RG =1.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=450A
RG =1.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0
-400
5.8
1.7
2.0
1.7
4.3
32
1.5
160
170
45
50
460
530
100
150
20
31
33
55
1800
6.5
2.15 V
1 mA
5 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.064 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
chip
IF=450A , VGE=0V, TJ=25
IF=450A , VGE=0V, TJ=125
1.65 2.15
V
1.65
trr
IRRM
Erec
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=450A , VR=600V
dIF/dt=-7200A/μs
TJ =125
255
ns
385
A
38
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.12 K /W
NTC CHARACTERISTICS
Symbol
Parameter/Test Conditions
R25
B25/50
Resistance
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
TC =25
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
5
K
3375
K
2


Part Number MMG450WB120B6TN
Description IGBT
Maker MacMic
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MMG450WB120B6TN Datasheet PDF






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