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MMG50HD120XB6T4N Datasheet Preview

MMG50HD120XB6T4N Datasheet

PIM

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January 2016
MMG50HD120XB6T4N
Version 0
1200V 50A PIM Module
RoHS Compliant
PRODUCT FEATURES
High level of integration
CHIP(Trench+Field Stop IGBT4 and EmCon4 diode)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
tp=1ms
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
±20
73
50
100
280
Unit
V
A
W
Values
1200
50
100
560
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




MacMic

MMG50HD120XB6T4N Datasheet Preview

MMG50HD120XB6T4N Datasheet

PIM

No Preview Available !

MMG50HD120XB6T4N
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=1.7mA
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=50A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=50A
RG =15,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC
Junction to Case Thermal Resistance (Per IGBT)
Min.
5.2
-200
Typ.
5.8
1.85
2.15
2.25
4
0.38
2.8
100
160
170
170
30
40
40
330
430
450
80
150
170
7.7
8.4
4.3
4.8
Max. Unit
6.4
2.25 V
1 mA
10 mA
200 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
180
A
0.54 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , VGE=0V, TJ =25
IF=50A , VGE=0V, TJ =125
IRRM
QRR
Erec
RthJCD
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=50A , VGE=0V, TJ=150
IF=50A , VR=600V
dIF/dt=-1400A/μs
TJ =150
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.7
1.65
1.65
63
10
3.7
Max. Unit
2.15
V
A
µC
mJ
0.81 K /W
2


Part Number MMG50HD120XB6T4N
Description PIM
Maker MacMic
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