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MMG50J120UZ6TC Datasheet Preview

MMG50J120UZ6TC Datasheet

IGBT

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June 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Low switching losses
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Popular SOT-227 Package
TJmax=175
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG50J120UZ6TC
Version 01
1200V 50A IGBT Module
RoHS Compliant
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Torque
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
RecommendedM4
RecommendedM4
Weight
Values
Unit
1200
V
±20
76
50
A
100
278
W
Values
Unit
175
-40~150
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG50J120UZ6TC




MacMic

MMG50J120UZ6TC Datasheet Preview

MMG50J120UZ6TC Datasheet

IGBT

No Preview Available !

MMG50J120UZ6TC
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=2mA
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=50A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=50A
RG =15Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=50A
RG =15Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=50A
RG =15Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125°C,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
6.0
1.85
2.10
2.15
3
0.27
3.5
160
30
35
38
40
270
330
100
200
6.2
8.4
2.7
4.4
215
Max. Unit
6.5
2.25
V
1
mA
10 mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.54 K /W
100
25
75
150
50
100
Vge=17V
Vge=15V
75
Vge=13V
Vge=11V
Vge=9V
50
25
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
2
25
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
MMG50J120UZ6TC


Part Number MMG50J120UZ6TC
Description IGBT
Maker MacMic
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MMG50J120UZ6TC Datasheet PDF






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