MMG50S170B6EN
FEATURES
- IGBT3 CHIP(1700V Trench+Field Stop technology)
- Low turn-off losses, short tail current
- VCE(sat) with positive temperature coefficient
- DIODE CHIP(1700V EMCON 3 technology)
- Free wheeling diodes with fast and soft reverse recovery
Version 01
1700V 50A IGBT Module Ro HS pliant
APPLICATIONS
- High frequency switching application
- Medical applications
- Motion/servo control
- UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
DC Collector Current
TC=25℃ TC=95℃
Repetitive Peak Collector Current tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1700 V
±20
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise...
