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MMG600WB065TLA6EN Datasheet Preview

MMG600WB065TLA6EN Datasheet

IGBT

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August 2016
MMG600WB065TLA6EN
Preliminary
650V 600A 3-Level IGBT Module
RoHS Compliant
PRODUCT FEATURES
650V IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Low switching losses and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
3-Level applications
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=60, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
650
V
±20
710
600
A
1200
1760
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
650
600
1200
19.8
Unit
V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMG600WB065TLA6EN Datasheet Preview

MMG600WB065TLA6EN Datasheet

IGBT

No Preview Available !

MMG600WB065TLA6EN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=9.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=125
IC=600A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=600A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=600A
RG =1.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=600A
RG =1.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=600A
RG =1.7,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=150,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-600
Typ.
5.8
1.45
1.6
1.7
0.7
6.5
39
1.15
120
140
110
120
500
560
70
90
5
6
6.5
24
27.5
28.5
3000
Max. Unit
6.5
1.9
V
1
mA
5
mA
600 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.085 K /W
Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=600A , VGE=0V, TJ=25
VF
Forward Voltage
IF=600A , VGE=0V, TJ=125
IF=600A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=600A , VR=300V
dIF/dt=-5000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
1.50
V
1.45
450
ns
300
A
47
µC
12.6
mJ
0.15 K /W
2


Part Number MMG600WB065TLA6EN
Description IGBT
Maker MacMic
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MMG600WB065TLA6EN Datasheet PDF






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