Click to expand full text
August 2016
MMG600WB065TLA6EN
Preliminary
650V 600A 3-Level IGBT Module RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Low switching losses and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included
APPLICATIONS
□ 3-Level applications
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter Voltage Gate Emitter Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃, TJmax=175℃ TC=60℃, TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
650 V
±20
710
600
A
1200
1760
W
Diode
ABSOLUTE MAX
MMG600WB065TLA6EN Datasheet
