900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MacMic

MMG75S120B6HN Datasheet Preview

MMG75S120B6HN Datasheet

IGBT

No Preview Available !

April 2015
MMG75S120B6HN
1200V 75A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(T4 Fast Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
TJmax =175°C
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
IC
Gate Emitter Voltage
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
V
±20
100
75
A
150
468
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
75
A
150
I2t
TJ =125, t=10ms, VR=0V
1150
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG75S120B6HN Datasheet Preview

MMG75S120B6HN Datasheet

IGBT

No Preview Available !

MMG75S120B6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=75A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
5.4 6.0
2.1
2.5
-400
10
0.35
4.4
240
150
160
170
60
65
70
360
400
420
40
60
70
10
11
4.5
4.8
300
6.5
2.5 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.32 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=75A , VGE=0V, TJ=25
IF=75A , VGE=0V, TJ=125
1.65 2.15
V
1.65
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=75A , VR=600V
dIF/dt=-1650A/μs
TJ =125
450
ns
65
A
13.5
µC
Erec
Reverse Recovery Energy
5.1
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.6 K /W
2


Part Number MMG75S120B6HN
Description IGBT
Maker MacMic
PDF Download

MMG75S120B6HN Datasheet PDF






Similar Datasheet

1 MMG75S120B6HN IGBT
MacMic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy