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MacMic

MMG800K060U6EN Datasheet Preview

MMG800K060U6EN Datasheet

IGBT

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May 2015
MMG800K060U6EN
600V 800A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
10K Gate Protected Resistance Inside
APPLICATIONS
High Power Converters
Medical applications
Motion/servo control
UPS systems/Wind Turbines
IGBT-Inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=60
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
600
V
±20
950
800
A
1600
2100
W
Reverse-Diode
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
600
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
800
A
1600
I2t
TJ =125, t=10ms, VR=0V
51200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG800K060U6EN Datasheet Preview

MMG800K060U6EN Datasheet

IGBT

No Preview Available !

MMG800K060U6EN
IGBT-Inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=12.8mA
4.9 5.8 6.5
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
IC=800A, VGE=15V, TJ=25
IC=800A, VGE=15V, TJ=125
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
1.45
1.6
-400
0.5
1.9 V
1 mA
10 mA
400 nA
Qg
Gate Charge
VCE=300V, IC=800A , VGE=±15V
8.6
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=300V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
52
nF
1.6
nF
260
ns
290
ns
70
ns
90
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=300V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc6µS , VGE=15V
TJ=125,VCC=360V
450
ns
520
ns
90
ns
100
ns
11
mJ
17
mJ
25
mJ
29
mJ
3500
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.07 K /W
Reverse-Diode
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=800A , VGE=0V, TJ=25
IF=800A , VGE=0V, TJ=125
1.55 1.9
V
1.5
IRRM
QRR
Erec
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=800A , VR=300V
dIF/dt=-9000A/μs
TJ =125
950
A
65
µC
17.6
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.12 K /W
2


Part Number MMG800K060U6EN
Description IGBT
Maker MacMic
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MMG800K060U6EN Datasheet PDF






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