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MMG800K120U6HN Datasheet Preview

MMG800K120U6HN Datasheet

IGBT

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June 2015
MMG800K120U6HN
Version 01
1200V 800A IGBT Module
RoHS Compliant
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(T4 Fast Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
5K Gate Protected Resistance Inside
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=75
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
1050
800
A
1600
3950
W
Reverse-Diode
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
800
1600
A
51200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMG800K120U6HN Datasheet Preview

MMG800K120U6HN Datasheet

IGBT

No Preview Available !

MMG800K120U6HN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=32mA
IC=800A, VGE=15V, TJ=25
IC=800A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=800A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
5.4 6.0
2.1
2.5
-400
1
3.8
50
2.8
250
320
340
90
95
100
550
650
700
60
80
90
65
70
50
55
6.5
2.5 V
1 mA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
3200
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.038 K /W
Reverse-Diode
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=800A , VGE=0V, TJ=25
IF=800A , VGE=0V, TJ=125
IF=800A , VR=600V
dIF/dt=-8000A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
2.25 2.6
2.25
V
450
ns
720
A
95
µC
40
mJ
0.065 K /W
2


Part Number MMG800K120U6HN
Description IGBT
Maker MacMic
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MMG800K120U6HN Datasheet PDF






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