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MMGT100J120UZ6C Datasheet Preview

MMGT100J120UZ6C Datasheet

IGBT

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November 2018
MMGT100J120UZ6C
Version 01
1200V 100A IGBT Module
RoHS Compliant
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Low switching losses
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Popular SOT-227 Package
TJmax=175
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1200
V
±20
150
100
A
200
575
W
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Visol
Torque
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
RecommendedM4
RecommendedM4
Weight
Values
Unit
175
-40~150
°C
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMGT100J120UZ6C Datasheet Preview

MMGT100J120UZ6C Datasheet

IGBT

No Preview Available !

MMGT100J120UZ6C
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=4mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
IC=100A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=100A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150°C,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
6.0
1.85
2.15
2.25
10
0.52
14.5
260
360
400
100
115
320
400
120
220
18
23
7.0
10.5
460
Max. Unit
6.5
2.25
V
1
mA
5
mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.26 K /W
200
25
150
150
100
200
Vge=17V
Vge=15V
150
Vge=13V
Vge=11V
Vge=9V
100
50
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
2
50
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT


Part Number MMGT100J120UZ6C
Description IGBT
Maker MacMic
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MMGT100J120UZ6C Datasheet PDF






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