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MMGT10CB120XB6C Datasheet Preview

MMGT10CB120XB6C Datasheet

IGBT

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November 2019
MMGT10CB120XB6C
Version 01
1200V 10A PIM Module
RoHS Compliant
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Substrate for Low Thermal Resistance
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Solder Contact Technology, Rugged mounting due to integrated
Mounting clamps
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=105, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
19
10
A
20
107
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
10
A
20
18
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMGT10CB120XB6C Datasheet Preview

MMGT10CB120XB6C Datasheet

IGBT

No Preview Available !

MMGT10CB120XB6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.25mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=10A, VGE=15V, TJ=25
IC=10A, VGE=15V, TJ=125
IC=10A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=10A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=10A
RG =50,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=10A
RG =50,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=10A
RG =50,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
0
0.08
0.8
35
20
25
25
22
24
24
150
180
210
180
215
225
1.15
1.25
0.69
0.72
40
1.25
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
1.4 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=10A , VGE=0V, TJ =25
VF
Forward Voltage
IF=10A , VGE=0V, TJ =125
IF=10A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=10A , VR=600V
dIF/dt=-500A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.95 2.45
1.55
V
1.5
161
ns
15
A
1.6
µC
0.57
mJ
1.75
1.9 K /W
2


Part Number MMGT10CB120XB6C
Description IGBT
Maker MacMic
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MMGT10CB120XB6C Datasheet PDF






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