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MMGT15CB120XB6C Datasheet Preview

MMGT15CB120XB6C Datasheet

IGBT

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February 2015
MMGT15CB120XB6C
1200V 15A PIM Module
Version 0
RoHS Compliant
PRODUCT FEATURES
IGBT chip in trench FS-technology
Substrate for Low Thermal Resistance
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Solder Contact Technology, Rugged mounting due to
integrated Mounting clamps
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=90
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
±20
25
15
30
150
Unit
V
A
W
Values
1200
10
20
16
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




MacMic

MMGT15CB120XB6C Datasheet Preview

MMGT15CB120XB6C Datasheet

IGBT

No Preview Available !

MMGT15CB120XB6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=0.6mA
IC=15A, VGE=15V, TJ=25
IC=15A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=125
VCE=600V, IC=15A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=15A,
RG =30,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=15A,
RG =30,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=15A,
RG =30,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5
-200
Typ.
5.8
1.7
1.9
0
0.16
2.1
0.18
30
40
25
30
220
250
160
250
0.8
1.3
1
1.2
Max. Unit
6.5
1.9 V
100 µA
1 mA
200 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
60
A
0.8 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=10A , VGE=0V, TJ =25
IF=10A , VGE=0V, TJ =125
IF=10A , VR=600V
dIF/dt=-600A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance (Per Diode)
Min.
Typ.
1.75
1.75
90
20
2.5
1.2
Max. Unit
2.25 V
ns
A
µC
mJ
1.65 K /W
2


Part Number MMGT15CB120XB6C
Description IGBT
Maker MacMic
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MMGT15CB120XB6C Datasheet PDF






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