MMGT200Q120B6C
FEATURES
- IGBT CHIP(Trench+Field Stop technology)
- High short circuit capability,self limiting short circuit current
- VCE(sat) with positive temperature coefficient
- Fast switching and short tail current
- Free wheeling diodes with fast and soft reverse recovery
- Low switching losses
APPLICATIONS
- High frequency switching application
- Medical applications
- Motion/servo control
- UPS systems
Version 01
1200V 200A IGBT Module Ro HS pliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter Voltage Gate Emitter Voltage
TJ=25℃
DC Collector Current
Repetitive Peak Collector Current
TC=25℃, TJmax=175℃ TC=105℃, TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive...
