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MacMic

MMGTU75J120U Datasheet Preview

MMGTU75J120U Datasheet

IGBT

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July 2015
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Popular SOT-227 Package
MMGTU75J120U
Version 0
1200V 75A IGBT Module
RoHS Compliant
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
100
75
A
150
410
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
60
120
A
I2t
TJ =125, t=10ms, VR=0V
1012
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMGTU75J120U Datasheet Preview

MMGTU75J120U Datasheet

IGBT

No Preview Available !

MMGTU75J120U
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=125
VCE=600V, IC=75A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=75A
RG =15,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =15,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =15,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=600V
5.0 5.8
2.2
2.5
-400
0
0.4
9.4
160
80
90
45
50
360
400
50
60
4.8
7.5
3.2
3.8
300
6.5
2.5 V
100 mA
1 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.3 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=60A , VGE=0V, TJ=25
IF=60A , VGE=0V, TJ=125
IF=60A , VR=600V
dIF/dt=-1000A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
2.4
2.0
2.8
V
150
ns
68
A
4.8
µC
2.2
mJ
0.7 K /W
2


Part Number MMGTU75J120U
Description IGBT
Maker MacMic
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MMGTU75J120U Datasheet PDF






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