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MMK100U160UX6J Datasheet Preview

MMK100U160UX6J Datasheet

1600V 100A Thyristor/Diode

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August 2014 Preliminary
MMK100U160UX6J
1600V 100A Thyristor/Diode Module
RoHS Compliant
PRODUCT FEATURES
Electrically Isolated by DBC Ceramic
High Surge Current Capability
Low Inductance Package
APPLICATIONS
DC Motor Control and Drives
Battery Charges ,Heater controls,Light dimmers
Static switches
MAXIMUM VOLTAGE RATINGS
Module Type
MMK100U160UX6J
T C =25°C unless otherwise specified
VRRM/VDRM
VRSM
Unit
1600
1700
V
ABSOLUTE MAXIMUM RATINGS (Thyristor)
Symbol
Parameter/Test Conditions
IT(AV)
IT(RMS)
ITSM
I2t
Average On-State Current
R.M.S. On-State Current
Single phase, half wave, 180°conduction, Tc= 80°C
Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45°C
I2t (For Fusing)
1/2 cycle, 50/60HZ, peak value ,Tc =45°C
TJ
Junction Temperature(Thyristor)
Values
100
150
2500/2700
31.2/30.2
-40 to +125
Unit
A
KA2S
°C
ABSOLUTE MAXIMUM RATINGS (Diode)
Symbol
Parameter/Test Conditions
IF(AV)
IF(RMS)
IFSM
I2t
Average Forward Current
R.M.S. Forward Current
Non-Repetitive Surge Forward Current
For Fusing
Single phase, half wave, 180°conduction, Tc= 95°C
1/2 cycle, 50/60HZ, peak value, Tc =45°C
1/2 cycle, 50/60HZ, peak value ,Tc =45°C
TJ
Junction Temperature(Diode)
Values
100
150
1250/1350
7.8/7.5
-40 to +150
Unit
A
KA2S
°C
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMK100U160UX6J Datasheet Preview

MMK100U160UX6J Datasheet

1600V 100A Thyristor/Diode

No Preview Available !

MMK100U160UX6J
ELECTRICAL CHARACTERISTICS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
IDRM
Maximum Peak Off-State Current
VD = VDRM, TJ = 125°C
IRRM
Maximum Peak Reverse Current
VR = VRRM, TJ = 125°C
Min. Typ. Max. Unit
25 mA
25
VTM
Maximum on-state voltage drop
ITM=100A,td=10 ms, half sine
1.15 V
VTO
For power-loss calculations only
rT
TJ = 125°C
VA=6V, RA=1,TJ = -40°C
0.9 V
2.5 m
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1
VA=6V, RA=1,TJ = 125°C
0.8 2.5 V
1.7
VA=6V, RA=1,TJ = -40°C
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1
65 150 mA
VA=6V, RA=1,TJ = 125°C
80
VGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125°C
IGD
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125°C
0.25 V
6 mA
IH
Maximum holding current
200 400 mA
IL
Maximum latching current
250 500 mA
PGM
PG(AV)
Maximum peak gate power
Maximum average gate power
12
W
3.0
IGM
Maximum peak gate current
3.0 A
-VGM
Maximum peak negative gate voltage
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125°C,exponential to 67% rated
VDRM
1000 V/μs
di/dt
Max.Rate of Rise of Turned-on Current, TJ =125°C,ITM=500A, rated VDRM
150 A/μs
ELECTRICAL CHARACTERISTICS (Diode)
Symbol
Parameter/Test Conditions
IRM
Maximum Reverse Leakage Current
VR = VRRM
VR = VRRM, TJ = 125°C
VF
Forward Voltage Drop
IF=100A
VTO
rT
For power-loss calculations only , TJ = 125°C
Min.
Typ.
Max. Unit
0.5 mA
10
1.15 V
0.9 V
2.5 m
MODULE CHARACTERISTICS
TSTG
VISO
Torque
Storage Temperature Range
Isolation Breakdown Voltage
to heatsink
T C =25°C unless otherwise specified
-40 to +125 °C
AC, 50Hz(R.M.S), t=1minute
3000
V
RecommendedM6
35
N.m
Torque to terminal
RecommendedM6
35
N.m
Rth(J-C) Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)
0.2/0.55 K /W
Weight
220
g
2


Part Number MMK100U160UX6J
Description 1600V 100A Thyristor/Diode
Maker MacMic
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