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MacMic

MMK200S160B Datasheet Preview

MMK200S160B Datasheet

thyristor

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May 2015
Version 01
MMK200S160B
200A Thyristor Module
RoHS Compliant
PRODUCT FEATURES
Electrically Isolated by DBC Ceramic
High Surge Current Capability
Low Inductance Package
APPLICATIONS
DC Motor Control and Drives
Battery Charges ,Heater controls,Light dimmers
Static switches
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VRRM
VDRM
VRSM
Repetitive Peak Reverse Voltage
Repetitive Peak Off State Voltage
Non-Repetitive Peak Reverse Voltage
T C =25°C unless otherwise specified
Values
MMK200S160B
1600
1600
1700
Unit
V
Symbol
Parameter/Test Conditions
IT(AV)
IT(RMS)
ITSM
Average On State Current
R.M.S. On State Current
Non Repetitive Surge On State
Current
Single phase, half wave, 180°conduction, Tc= 80
Single phase, half wave, 180°conduction, Tc =80
1/2 cycle, 50HZ, peak value, Tc =45
1/2 cycle, 60HZ, peak value, Tc =45
I2t
For Fusing
1/2 cycle, 50HZ, peak value ,Tc =45
1/2 cycle, 60HZ, peak value, Tc =45
TJ
TSTG
Junction Temperature
Storage Temperature Range
VISO
Torque
Isolation Breakdown Voltage
Module to Sink
AC, 50Hz(R.M.S), t=1minute
RecommendedM6
Torque Module Electrodes
RecommendedM6
RthJC
Junction to Case Thermal Resistance
Weight
Values Unit
200
310
A
5000
5400
125.0
121.0
KA2S
-40 to +125
-40 to +125
3000
V
35
Nm
35
Nm
0.12
K /W
160
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMK200S160B Datasheet Preview

MMK200S160B Datasheet

thyristor

No Preview Available !

MMK200S160B
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IDRM
IRRM
Maximum Peak Off-State Current
Maximum Peak Reverse Current
VD = VDRM, TJ = 125°C
VR = VRRM, TJ = 125°C
25 mA
25
VTM
Maximum on-state voltage drop
ITM=600A,td=10 ms, half sine
1.75 V
VTO
For power-loss calculations only
rT
TJ = 125°C
0.85 V
1.7 m
VA=6V, RA=1,TJ = -40°C
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1
2.5 V
VA=6V, RA=1,TJ = 125°C
1.7
VA=6V, RA=1,TJ = -40°C
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1
75 150 mA
VA=6V, RA=1,TJ = 125°C
80
VGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125°C
0.25 V
IGD
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125°C
10 mA
IH
Maximum holding current
150 300 mA
IL
Maximum latching current
250 500 mA
PGM
PG(AV)
Maximum peak gate power
Maximum average gate power
10
W
2.5
IGM
Maximum peak gate current
2.5 A
-VGM
Maximum peak negative gate voltage
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125°C,exponential to 67% rated
VDRM
1000 V/μs
di/dt
VD = 2/3VDRM,IG = 0.3A, dig/dt=0.3A/μs, TJ = 125°C
150 A/μs
2


Part Number MMK200S160B
Description thyristor
Maker MacMic
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