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MMK35LB160HB Datasheet Preview

MMK35LB160HB Datasheet

Half Controlled Single Phase Rectifier Bridge

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May 2015
MMK35LB160HB
Half Controlled Single Phase Rectifier Bridge
Version 01
RoHS Compliant
PRODUCT FEATURES
Electrically Isolated by DBC Ceramic
High Surge Current Capability
Low Inductance Package
APPLICATIONS
DC Motor Control and Drives
Supply for DC power Equipment
MAXIMUM VOLTAGE RATINGS
Symbol
Parameter/Test Conditions
VRRM
VDRM
VRSM
Repetitive Peak Reverse Voltage
Repetitive Peak Off State Voltage
Non-Repetitive Peak Reverse Voltage
T C =25°C unless otherwise specified
Values
MMK35LB160HB
Unit
1600
1600
V
1700
ABSOLUTE MAXIMUM RATINGS (Thyristor)
Symbol
Parameter/Test Conditions
IT(AV)
IT(RMS)
ITSM
I2t
Average On State Current
R.M.S. On State Current
Single phase, half wave, 180°conduction, Tc= 95
Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45
For Fusing
1/2 cycle, 50/60HZ, peak value ,Tc =45
TJ
Junction Temperature(Thyristor)
Values
35
55
450/500
1012/1037
-40 to +125
Unit
A
A2S
ABSOLUTE MAXIMUM RATINGS (Diode)
Symbol
Parameter/Test Conditions
IF(AV)
IF(RMS)
Average Forward Current
R.M.S. Forward Current
Single phase, half wave, 180°conduction, Tc= 105
IFSM
Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45
I2t
For Fusing
1/2 cycle, 50/60HZ, peak value ,Tc =45
TJ
Junction Temperature(Diode)
Values
35
55
600/650
1800/1753
-40 to +150
Unit
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




MacMic

MMK35LB160HB Datasheet Preview

MMK35LB160HB Datasheet

Half Controlled Single Phase Rectifier Bridge

No Preview Available !

MMK35LB160HB
ELECTRICAL CHARACTERISTICS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IDRM
IRRM
Maximum Peak Off-State Current
Maximum Peak Reverse Current
VD = VDRM, TJ = 125
VR = VRRM, TJ = 125
25 mA
25
VTM
Maximum on-state voltage drop
ITM=110A,td=10 ms, half sine
1.75 V
VTO
For power-loss calculations only
rT
TJ = 125
0.97 V
8.8 m
VA=6V, RA=1,TJ = -40
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1
1.0 2.5 V
VA=6V, RA=1,TJ = 125
1.7
VA=6V, RA=1,TJ = -40
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1
75 150 mA
VA=6V, RA=1,TJ = 125
80
VGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125
0.25 V
IGD
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125
6 mA
IH
Maximum holding current
100 200 mA
IL
Maximum latching current
200 400 mA
PGM
PG(AV)
Maximum peak gate power
Maximum average gate power
10
W
2.5
IGM
Maximum peak gate current
2.5 A
-VGM
Maximum peak negative gate voltage
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125,exponential to 67% rated
VDRM
1000 V/μs
di/dt
Max.Rate of Rise of Turned-on Current, TJ =125,ITM=110A, rated VDRM
150 A/μs
ELECTRICAL CHARACTERISTICS (Diode)
Symbol
Parameter/Test Conditions
IRM
Maximum Reverse Leakage Current
VR = VRRM
VR = VRRM, TJ = 125
VF
Forward Voltage Drop
IF=35A
VTO
rT
For power-loss calculations only , TJ = 125
Min.
Typ.
1.02
Max. Unit
0.5 mA
10
1.25 V
0.88 V
8.5 m
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
TJ
Junction Temperature
-40 to +125
TSTG
Storage Temperature Range
-40 to +125
VISO
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
3000
Torque to heatsink
RecommendedM5
2.55
Rth(J-C) Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)
0.6/1.0
Weight
85
V
N.m
K /W
g
2


Part Number MMK35LB160HB
Description Half Controlled Single Phase Rectifier Bridge
Maker MacMic
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