Full PDF Text Transcription for MMN1000DB010B (Reference)
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MMN1000DB010B. For precise diagrams, and layout, please refer to the original PDF.
March 2016 PRODUCT FEATURES ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Pro...
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ge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier Type MMN1000DB010B VDS 100V ID 1000A RDS(ON).max TJ=25ć 0.
MMN1000DB010B Datasheet
