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MacMic

MMN200H010X Datasheet Preview

MMN200H010X Datasheet

MOSFET

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April 2012 PRELIMINARY
MMN200H010X
100V 200A MOSFET Module
RoHS Compliant
FEATURES
N-channel,very low on-resistance RDS(on)
175operating temperature
Solderable pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
INVERTER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MOSFET
VDSS
Drain - Source Voltage
VGSS
Gate - Source Voltage
ID
Continuous Drain Current
ID pulse Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Ptot
Power Dissipation Per MOSFET
Reverse Diode
VRRM
Repetitive Reverse Voltage
IS
Diode continous Forward Current
IS pulse Diode pulse Current
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
TVj=25°C
TC=25°C
TC=100°C
TC=25°C
ID=100A, RGS =25Ω
100
V
±20
V
200
A
200
A
800
A
350
mJ
275
W
TVj=25°C
TC=25°C
TC=100°C
TC=25°C
100
V
200
A
200
A
800
A
MacMic Science & Technology Co., Ltd.
Version: 1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




MacMic

MMN200H010X Datasheet Preview

MMN200H010X Datasheet

MOSFET

No Preview Available !

INVERTER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
MMN200H010X
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
MOSFET
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=1m A
RDS(ON) Drain-Source ON Resistance
VGS=10V, ID=100A (TO 262)
VGS=10V, ID=50A (TO 263)
VGS(th) Gate Threshold Voltage
VGS= VDS , ID=150µA
IGSS
Gate Leakage Current
VDS=0V,VGS=20V
IDSS
Zero Gate Voltage Drain Current VDS=100V,VGS=0V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD=50V, ID=200A , VGS=10V
Qgd
Gate-Drain Charge
gfs
Forward Transconductance
ID=200A
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=50V, VGS=0V,
f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
tr
td(off)
Turn - on Delay Time
Rise Time
Turn - off Delay Time
VDD=50V,ID=100A,
RG =0.8Ω,
VGS=10V,
tf
Fall Time
Rth(ch-c) Thermal resistance,channel to case
Reverse Diode
VSD
Forward Voltage
IF=200A , VGE=0V, TVj =25°C
trr
QRRM
Reverse Recovery Time
Max. Reverse Recovery Charge
IF=200A , VR=50V
diF/dt=-100A/µs
TVj =125°C
Min. Typ. Max. Unit
100
V
4.5 m
4.2 m
2.0 2.7 3.5
V
100 nA
10 µA
190
nC
60
nC
35
nC
145
S
12.7
nF
2.5
nF
100
pF
35
ns
78
ns
65
ns
22
ns
0.55 /W
1.0 1.2
V
100
ns
300
nc
NTC AND OTHERS SECTOR
CHARACTERISTIC VALUES
Symbol
Parameter
R25 NTC Resistance
B25/50 NTC
R1 R6 Resistance
R7 R12 Resistance
D1-D6 Zener diode
C
Capacitance
TC=25°C unless otherwise specified
Test Conditions
TC =25°C
TC =25°C
TC =25°C
Min. Typ. Max. Unit
5
K
3375
K
10
51
K
±18
V
0.9
uF
-2-


Part Number MMN200H010X
Description MOSFET
Maker MacMic
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