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MMN400A006U1 - MOSFET

Key Features

  • RDS(ON). typ=0.35mΩ@VGS=10V.
  • 175℃operating temperature.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery body Diode.
  • 20K Ω Gate Protected Resistance Inside.
  • Inside the module,each MOSFET chip has a gate resistance:2.2Ω.

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Datasheet Details

Part number MMN400A006U1
Manufacturer MacMic
File Size 634.02 KB
Description MOSFET
Datasheet download datasheet MMN400A006U1 Datasheet

Full PDF Text Transcription for MMN400A006U1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMN400A006U1. For precise diagrams, and layout, please refer to the original PDF.

August 2016 MMN400A006U1 60V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate...

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ES □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN400A006U1 VDS 60V ID 400A RDS(ON).max TJ=25℃ 0.