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MMN600DB015B - 150V 600A N-ch Power MOSFET

Features

  • RDS(ON). typ=1.8mΩ@VGS=10V.
  • 175℃ junction temperature.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery body Diode.
  • 20K Ω Gate Protected Resistance Inside.

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Datasheet preview – MMN600DB015B

Datasheet Details

Part number MMN600DB015B
Manufacturer MacMic
File Size 307.30 KB
Description 150V 600A N-ch Power MOSFET
Datasheet download datasheet MMN600DB015B Datasheet
Additional preview pages of the MMN600DB015B datasheet.

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Full PDF Text Transcription

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April 2015 MMN600DB015B 150V 600A N-ch Power MOSFET Module Version 0 RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN600DB015B VDS 150V ID 600A RDS(ON).max TJ=25°C 2.
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