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MacMic

MMN668A010U1 Datasheet Preview

MMN668A010U1 Datasheet

MOSFET

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May 2016
MMN668A010U1
100V 668A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
RDS(ON).typ=1.1m@VGS=10V
175operating temperature
Low Gate Charge Minimize Switching Loss
Fast Recovery body Diode
20K Gate Protected Resistance Inside
Inside the module,each MOSFET chip has a gate resistance:2.2
APPLICATIONS
High efficiency DC/DC Converters
ISG EV Products
UPS inverter
Type
MMN668A010U1
VDS
100V
ID
668A
RDS(ON).max TJ=25
1.4m
TJmax
175
Marking
MMN668A010U1
Package
NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain - Source Voltage
TJ=25
VGSS Gate - Source Voltage
ID Continuous Drain Current
TC=25
TC=100
IDM Pulsed Drain Current at VGS=10V
Limited by TJmax
PD Maximum Power Dissipation
EAS Single Pulse Avalanche Energy
VDD=50V,L=1mH
Values
100
±20
668
470
940
1071
3000
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC
TJmax
Thermal resistance,junction to case Per MOSFET
Max. Junction Temperature
TSTG
Torque
Storage Temperature Range
to heatsink
to terminal
RecommendedM5
RecommendedM5
Weight
Values
0.14
175
-40125
2.55
2.55
110
Unit
V
A
W
mJ
Unit
K/W
Nm
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1 Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




MacMic

MMN668A010U1 Datasheet Preview

MMN668A010U1 Datasheet

MOSFET

No Preview Available !

MMN668A010U1
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=300A(chip)
IDSS Drain Source Leakage Current
VDS=100V,VGS=0V
VGS(th) Gate Threshold Voltage
VGS= VDS , ID=1mA
IGSS Gate Leakage Current
VDS=0V,VGS=±20V
Rgint Integrated Gate Resistor
Qg Total Gate Charge
Qgs Gate Source Charge
VDD=65V, ID=300A , VGS=10V
Qgd Gate Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr Rise Time
td(off)
Turn off Delay Time
tf Fall Time
VDD=50V,ID=200A,
RG =5, VGS=10V,
Resistive Load
TJ=25
Min. Typ. Max. Unit
100 V
1.1 1.4 m
2 mA
2.0 4.0 V
-2 2 mA
1.2
660 nC
170 nC
225 nC
44 nF
3.05 nF
0.73 nF
122 ns
88 ns
540 ns
112 ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
ISD Continuous Source Drain Current
ISDM Pulse Source Drain Current
Limited by TJmax
VSD Forward Voltage
trr Reverse Recovery time
QRR Reverse Recovery Charge
IS=300A , VGS=0V
IF=200A , VGS=0V
dIF/dt=-140A/μs
Typ.
1.0
130
800
Max.
400
800
1.2
Unit
A
A
V
ns
nC
2


Part Number MMN668A010U1
Description MOSFET
Maker MacMic
PDF Download

MMN668A010U1 Datasheet PDF






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