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MX26LV004B - (MX26LV004T/B) 4M-Bit CMOS Single Voltage Flash Memory

Download the MX26LV004B datasheet PDF. This datasheet also covers the MX26LV004T variant, as both devices belong to the same (mx26lv004t/b) 4m-bit cmos single voltage flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The MX26LV004T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits.

MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory.

The MX26LV004T/B is packaged in 40-pin TSOP.

Features

  • Extended single - supply voltage range 3.0V to 3.6V.
  • 524,288 x 8.
  • Single power supply operation - 3.0V only operation for read, erase and program operation.
  • Fast access time: 55/70ns.
  • Low power consumption - 30mA maximum active current - 30uA typical standby current.
  • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 16K-Byte x1, 8K-Byte x2, 32K-Byte x1, and 64K-Byte x7).
  • Auto Erase (chi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX26LV004T_Macronix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX26LV004B
Manufacturer Macronix
File Size 487.87 KB
Description (MX26LV004T/B) 4M-Bit CMOS Single Voltage Flash Memory
Datasheet download datasheet MX26LV004B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED INFORMATION MX26LV004T/B Macronix NBit TM Memory Family 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55/70ns • Low power consumption - 30mA maximum active current - 30uA typical standby current • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 16K-Byte x1, 8K-Byte x2, 32K-Byte x1, and 64K-Byte x7) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.
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