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MX26LV800B - 8M-Bit CMOS Single Voltage Flash Memory

Download the MX26LV800B datasheet PDF. This datasheet also covers the MX26LV800T variant, as both devices belong to the same 8m-bit cmos single voltage flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The MX26LV800T/B is a 8-mega bit high speed Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's high speed Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX26LV800T/B is packaged in 48-pin TSOP, and 48-ball CSP.

Features

  • Extended single - supply voltage range 3.0V to 3.6V.
  • 1,048,576 x 8/524,288 x 16 switchable.
  • Single power supply operation - 3.0V only operation for read, erase and program operation.
  • Fast access time: 55/70ns.
  • Low power consumption - 30mA maximum active current - 30uA typical standby current.
  • Command register architecture - Byte/word Programming (55us/70us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX26LV800T_Macronix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX26LV800B
Manufacturer Macronix
File Size 573.34 KB
Description 8M-Bit CMOS Single Voltage Flash Memory
Datasheet download datasheet MX26LV800B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MX26LV800T/B Macronix NBit TM Memory Family 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55/70ns • Low power consumption - 30mA maximum active current - 30uA typical standby current • Command register architecture - Byte/word Programming (55us/70us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase verify capability.
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